Researchers at the University of California, Santa Barbara have developed a quantum mechanical model that explains how single, high-energy electrons can break atomic bonds within silicon-based microelectronics, a process that gradually degrades device performance over time. This phenomenon, known as single-event upset or damage, is a critical reliability concern for semiconductors operating in harsh environments like space or within high-performance computing systems.
The study, led by Professor Chris Van de Walle's research group in the Materials Department, used advanced computational techniques to simulate the precise interaction where an energetic electron transfers its energy directly to a specific atomic bond in the silicon lattice or at an interface, causing it to break. This creates a defect that can trap charge or alter local electrical properties, cumulatively leading to circuit failure.
This detailed understanding moves beyond previous empirical observations, providing a fundamental quantum-level explanation for a long-standing problem in device physics. The research, supported by the U.S. Department of Energy and the Office of Naval Research, was published in the journal Applied Physics Letters. The findings are crucial for designing more radiation-hardened and durable electronic components for critical infrastructure, aerospace, and future computing technologies.
